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TP857LED03 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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TP857LED03 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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1 / 4 page ![]() JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03E Plastic-Encapsulate Transistors TP857LED03 TRANSISTOR (PNP) FEATURE Low Current Low Voltage Ultra Small SMD Plastic Package Complementary to TP847LED03 For General-purpose Switching and Amplification MARKING: D2 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -6 V IC Collector Current -100 mA PC Collector Power Dissipation 100 mW RΘJA Thermal Resistance from Junction to Ambient 1250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test condition Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -6 V Collector cut-off current ICBO VCB=-30V, IE=0 -15 nA Emitter cut-off current IEBO VEB=-5V, IC=0 -15 nA DC current gain hFE*VCE=-5V, IC=-2mA 220 475 Collector-emitter saturation voltage VCE(sat)1*IC=-10mA, IB=-0.5mA -0.2 V VCE(sat)2*IC=-100mA, IB=-5mA -0.4 V Base-emitter saturation voltage VBE(sat)1*IC=-10mA, IB=-0.5mA -0.7 V VBE(sat)2*IC=-100mA, IB=-5mA -0.9 V Base-emitter voltage VBE1* VCE=-5V, IC=-2mA -0.7 V VBE2*VCE=-5V, IC=-10mA -0.77 V Transition frequency fT VCE=-5V,IC=-10mA,f=100MHz 100 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 2.5 pF Noise figure NF VCE=-5V, IE=-0.2mA, f=1kHz, RS=1kΩ,B=200Hz 10 dB *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. WBFBP-03E 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014 www.cj-elec.com B,Nov,2016 D2 |
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