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SSM9577 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSM9577 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SSM9577 -3.8A, -60V, RDS(O ) 85mΩ Ω Ω Ω P-Channel Enhancement Mode Power MOSFET 24-May-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSM9577 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications . The SSM9577 meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-223 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V TA=25°C -3.8 A Continuous Drain Current @VGS=10V 1 TA=70°C ID -3 A Pulsed Drain Current 3 IDM -8 A Total Power Dissipation TA=25°C PD 1.5 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Thermal Resistance from Junction to Ambient 1 85 Maximum Thermal Resistance from Junction to Ambient 2 RθJA 125 Maximum Thermal Resistance from Junction to Case 1 RθJC 60 °C / W SOT-223 Top View 1 2 3 4 A M B D L K F G H J E C 1Gate 3 Source 2 Drain Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.90 6.70 G - 0.18 B 6.70 7.30 H 2.00 REF. C 3.30 3.80 J 0.20 0.40 D 1.40 1.90 K 1.10 REF. E 4.45 4.75 L 2.30 REF. F 0.60 0.85 M 2.80 3.20 9577 = Date code |
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