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AWB317 Datasheet(PDF) 13 Page - Advanced Semiconductor Business Inc. |
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AWB317 Datasheet(HTML) 13 Page - Advanced Semiconductor Business Inc. |
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13 / 19 page ![]() 13/19 ASB Inc. sales@asb.co.kr February 2017 AWB317 6.1 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 75 Parameter Forward Unit Frequency 50 500 1000 1200 MHz Noise Figure 2.8 2.6 2.8 2.9 dB Gain 15.4 16.3 15.1 14.3 dB S11 -18 -18 -19 -18 dB S22 -20 -19 -20 -18 dB Output IP31) 40 40 41 38 dBm Output IP21), 2) 60 dBm CSO3) 68 dBc CTB3) 96 dBc Current 112 mA Device Voltage +5 V 1) OIP3 and OIP2 are measured with two tones at an output power of +8 dBm/tone separated by 6 MHz. 2) OIP2 is measured at F1+F2 Frequency. (F1 = 400 MHz, F2 = 450 MHz) 3) The CSO, CTB value is estimated based upon theory at NTSC-79, Pout=85 dB V. Mesured data to be updated soon. 6.2 Plot of S-parameters & Stability Factor 0 200 400 600 800 1000 1200 Frequency (MHz) -60 -50 -40 -30 -20 -10 0 10 20 30 40 0 1 2 3 4 5 6 7 8 9 10 S21 S12 S11 S22 K |
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