AMA930N datasheet(1/5 Pages) ANALOGPOWER

Part #	AMA930N

Description	Dual N-Channel 30-V (D-S) MOSFET

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Manufacturer	ANALOGPOWER [Analog Power]

Direct Link	http://www.analogpowerinc.com/index.html

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Analog Power

AMA930N

Dual N-Channel 30-V (D-S) MOSFET

VDS (V)

ID(A)

4.4

3.4

Symbol

Limit

Units

VDS

30

VGS

±12

TA=25°C

4.4

TA=70°C

3.5

IDM

±10

IS

2.2

A

TA=25°C

2.1

TA=70°C

1.3

TJ, Tstg

-55 to 150

°C

Symbol

Maximum

Units

60

110

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

PRODUCT SUMMARY

30

rDS(on) (mΩ)

63 @ VGS = 4.5V

110 @ VGS = 2.5V

Power Dissipation

a

Continuous Source Current (Diode Conduction)

a

Pulsed Drain Current

b

Continuous Drain Current

a

Gate-Source Voltage

ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)

V

Parameter

Drain-Source Voltage

Maximum Junction-to-Ambient

a

t <= 10 sec

Steady State

THERMAL RESISTANCE RATINGS

°C/W

Parameter

RθJA

A

ID

Operating Junction and Storage Temperature Range

PD

W

Key Features:

• Low rDS(on) trench technology

• Low thermal impedance

• Fast switching speed

Typical Applications:

• White LED boost converters

• Automotive Systems

• Industrial DC/DC Conversion Circuits

1

Publication Order Number:

DS-AMA930N-2010

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