A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

200

Na

1.0

µA

30

150

300

---

f = 1.0 MHz

0.2

pF

f = 1.0 GHz

8.0

GHz

S

f = 2.0 GHz

f = 4.0 GHz

12.0

6.5

dB

f = 2.0 GHz

f = 4.0 GHz

19.0

18.5

dBm

f = 2.0 GHz

f = 4.0 GHz

15.0

10.5

dB

f = 1.0 GHz

f = 2.0 GHz

f = 4.0 GHz

1.3

1.6

3.0

1.9

dB

NPN SILICON BIPOLAR TRANSISTOR

AT41470

DESCRIPTION:

The

Emitter Device Designed for low noise,

wideband amplifier, mixer and

oscillator applications in the VHF,

UHF, and microwave frequencies.

MAXIMUM RATINGS

60 mA

12 V

20 V

1.5 V

-65 °C to +200 °C

-65 °C to +150 °C

PACKAGE STYLE

1 = BASE

2 & 4 = EMITTER

3 = COLLECTOR