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2SB1283 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB1283 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Darlingtion Power Transistor 2SB1283 DESCRIPTION · High DC Current Gain- : hFE= 1500(Min.)@IC= -3A · Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -3A · Good Linearity of hFE · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · High power switching applications. · Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -10 A IB Base Current-Continuous -0.5 A IBM Base Current-peak -1 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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