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MBRD320G Datasheet(PDF) 2 Page - ON Semiconductor

Part # MBRD320G
Description  SWITCHMODE Power Rectifiers
PDF  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBRD320G Datasheet(HTML) 2 Page - ON Semiconductor

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MBRD320, MBRD330, MBRD340, MBRD350, MBRD360
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MBRD
Unit
Rating
Symbol
320
330
340
350
360
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
50
60
V
Average Rectified Forward Current (TC = +125°C, Rated VR)
IF(AV)
3
A
Peak Repetitive Forward Current, TC = +125°C
(Rated VR, Square Wave, 20 kHz)
IFRM
6
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
75
A
Peak Repetitive Reverse Surge Current (2
ms, 1 kHz)
IRRM
1
A
Operating Junction Temperature Range
TJ
−65 to +150
°C
Storage Temperature Range
Tstg
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/
ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress
limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation
is not implied, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction−to−Case
RqJC
6
°C/W
Maximum Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
80
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
iF = 3 Amps, TC = +25°C
iF = 3 Amps, TC = +125°C
iF = 6 Amps, TC = +25°C
iF = 6 Amps, TC = +125°C
VF
0.6
0.45
0.7
0.625
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = +25°C)
(Rated dc Voltage, TC = +125°C)
iR
0.2
20
mA
1. Rating applies when surface mounted on the minimum pad size recommended.
2. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2.0%.



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