EC744N65

650V,5.5A N-Channel Power MOSFET

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4J06N-Rev.F001

Drain-Source Diode Forward

Continuous Current

-

-

3.7

A

Maximum Pulsed Current

-

-

14.8

A

Drain-Source Diode Forward

Voltage

-

0.86

1.5

V

Notes :

b. Repetitive rating; pulse width limited by maximum junction temperature.

d. Pulse width≦ 38

0 μs; duty cycle≦ 2%.

Figure3 Maximum Safe Operating Area

Figure 2. Normalized On-Resistance

Variation with Temperature

Figure 1 . Normalized Effective Transient Thermal Impedance With Pulse Duration