AMA960N datasheet(1/5 Pages) ANALOGPOWER

Part #	AMA960N

Description	Dual N-Channel 60-V (D-S) MOSFET

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Manufacturer	ANALOGPOWER [Analog Power]

Direct Link	http://www.analogpowerinc.com/index.html

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Analog Power

AMA960N

Dual N-Channel 60-V (D-S) MOSFET

VDS (V)

ID (A)

2.0

1.8

Symbol

Limit

Units

VDS

60

VGS

±20

TA=25°C

2.0

TA=70°C

1.6

IDM

10

IS

1.8

A

TA=25°C

1.5

TA=70°C

0.95

TJ, Tstg

-55 to 150

°C

Symbol

Maximum

Units

40

90

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Power Dissipation

a

t <= 10 sec

Steady State

RθJA

ID

A

PD

W

Gate-Source Voltage

PRODUCT SUMMARY

60

rDS(on) (mΩ)

260 @ VGS = 10V

330 @ VGS = 4.5V

Pulsed Drain Current

b

Continuous Source Current (Diode Conduction)

a

THERMAL RESISTANCE RATINGS

°C/W

Parameter

Operating Junction and Storage Temperature Range

ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)

V

Parameter

Drain-Source Voltage

Maximum Junction-to-Ambient

a

Continuous Drain Current

a

Key Features:

• Low rDS(on) trench technology

• Low thermal impedance

• Fast switching speed

Typical Applications:

• White LED boost converters

• Automotive Systems

• Industrial DC/DC Conversion Circuits

DFN2x2-6L

1

Publication Order Number:

DS_AMA960N_1A

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