EC736007

-50V、

、

、

、-130mA P-Channel MOSFET

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5D16-Rev.F001

-50V

2.1ohm(typ.)

-130mA

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance. These features

combine to make this design an extremely efficient and reliable device for use in line current interrupter in telephone sets

and a wide variety of other applications

Features and Benefits:

Advanced MOSFET process technology

Special designed for Line current interrupter in

telephone sets, Relay, high speed and line

transformer drivers and general purpose

applications

Ultra low on-resistance with low gate charge

Fast switching and reverse body recovery

150℃ operating temperature

Main Product Characteristics

Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

Junction-to-ambient(t≤10s)

④

—

556

℃/W

Junction-to-Ambient (PCBmounted, steady-state)

④

—

540

℃/W

Symbol

Parameter

Max.

Units

①

-130

①

-100

Pulsed Drain Current

②

-520

mA

Power Dissipation

③

230

mW

Drain-Source Voltage

-50

V

Gate-to-Source Voltage

± 20

V

ESD

ESD Rating (HBM module)

1

KV

Operating Junction and Storage Temperature

Range

-55 to + 150

°C

SOT-23

6007

Marking and assigment

Schematic diagram