STGY40NC60VD

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Table 3: Absolute Maximum ratings

(1)Pulse width limited by max. junction temperature.

Table 4: Thermal Data

Table 5: Off

Table 6: On

(#) Calculated according to the iterative formula:

Symbol

Parameter

Value

Symbol

600

V

Reverse Battery Protection

20

V

Gate-Emitter Voltage

± 20

V

Collector Current (continuous) at 25°C (#)

80

A

Collector Current (continuous) at 100°C (#)

50

A

Collector Current (pulsed)

200

A

30

A

260

W

Derating Factor

2.08

W/°C

Storage Temperature

– 55 to 150

°C

Operating Junction Temperature

Min.

Typ.

Max.

Unit

Rthj-case

Thermal Resistance Junction-case (IGBT)

--

--

0.48

°C/W

Rthj-case

Thermal Resistance Junction-case (Diode)

--

--

1.5

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

--

--

50

°C/W

Maximum Lead Temperature for Soldering Purpose

(1.6 mm from case, for 10 sec.)

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Collectro-Emitter Breakdown

Voltage

600

V

Collector-Emitter Leakage

Tc=25°C

Tc=125°C

10

1

µA

mA

Gate-Emitter Leakage

± 100

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate Threshold Voltage

3.75

5.75

V

Collector-Emitter Saturation

Voltage

Tj= 125°C

1.9

1.7

2.5

V

V

I

C

T

C

()

T

JMAX

T

C

–

R

THJ

C

–

V

CE SAT M AX

() TC IC

,

()

×

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