EC733339 datasheet(2/6 Pages) E-CMOS

2 / 6 page

EC733339

-30V、

、

、-4.1A P-Channel MOSFET

E-CMOS Corp. (www.ecmos.com.tw)

Page 2 of 6

4K27N-Rev.F001

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

-30

—

VGS = 0V, ID = -250µA

—

VGS=-10V,ID = -4.1A

RDS(on)

Static Drain-to-Source on-resistance

—

VGS=-4.5V,ID = -3A

-1

—

-3

VGS(th)

Gate threshold voltage

—

-1.4

—

VDS = VGS, ID = -250µA

TJ = 125°C

—

-1

IDSS

Drain-to-Source leakage current

—

-50

µA

VDS = -24V,VGS = 0V

TJ = 125°C

—

100

VGS =20V

IGSS

Gate-to-Source forward leakage

—

-100

VGS = -20V

Total gate charge

—

Qgs

Gate-to-Source charge

—

2.5

—

Qgd

Gate-to-Drain("Miller") charge

—

5.0

—

ID = -6A,

VDS=-25V,

VGS = -10V

td(on)

Turn-on delay time

—

7.2

—

Rise time

—

4.8

—

td(off)

Turn-Off delay time

—

Fall time

—

VGS=-10V, VDS =-25V,

RGEN=3 ，

Ciss

Input capacitance

—

665

—

Coss

Output capacitance

—

108

—

Crss

Reverse transfer capacitance

—

VGS = 0V,

VDS =-15V,

ƒ = 1MHz

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

-4.1

①

ISM

Pulsed Source Current

(Body Diode)

—

-20

MOSFET symbol

showing the

integral reverse

p-n junction diode.

VSD

Diode Forward Voltage

—

-0.79

-1.0

IS=1A, VGS=0V

trr

Reverse Recovery Time

—

9.7

—

Qrr

Reverse Recovery Charge

—

3.8

—

TJ = 25°C, IF =-6A,

di/dt = 100A/µs

Electrical Characteristics (TA=25℃

℃

℃ unless otherwise noted)

Source-Drain Ratings and Characteristics

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