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T0514VL Datasheet(PDF) 2 Page - Chip Integration Technology Corporation

Part # T0514VL
Description  Low Capacitance ESD Protection Device
PDF  9 Pages
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Manufacturer  CITC [Chip Integration Technology Corporation]
Direct Link  http://www.citcorp.com.tw/english/index.php
Logo CITC - Chip Integration Technology Corporation

T0514VL Datasheet(HTML) 2 Page - Chip Integration Technology Corporation

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2
Absolute Maximum Rating
Symbol
Parameter
Value
Units
VESD
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
±27
±17
kV
TOPT
Operating Temperature
-55/+125
C
TSTG
Storage Temperature
-55/+150
o
C
Electrical Characteristics (T = 25 C)
Symbol
Parameter
VRWM
Nominal Reverse Working Voltage
IR
Reverse Leakage Current @ VRWM
VBR
Reverse Breakdown Voltage @ IT
IT
Test Current for Reverse Breakdown
VC
Clamping Voltage @ IPP
IPP
Maximum Peak Pulse Current
CESD
Parasitic Capacitance
VR
Reverse Voltage
f
Small Signal Frequency
IF
Forward Current
VF
Forward Voltage @ IF
Voltage
Current
VF
IF
VRWM
VBR
VC
IPP
IR
IT
Uni-Directional TVS
Symbol
Test Condition
Minimum
Typical
Maximum
Units
VRWM
IR
VRWM = 5V, T = 25 C
Between I/O and GND
0.1
1.0
μA
VBR
IT = 1mA
Between I/O and GND
6.0
8.0
10.0
V
VC
IPP = 1A, tp = 8/20μs
Between I/O and GND
CESD
VR = 0V, f = 1MHz
Between I/O and GND
pF
CESD
VR = 0V, f = 1MHz
Between I/O and I/O
pF
0.7
0.8
0.35
o
o
o
12.0
V
5.0
V
Chip Integration Technology Corporation
Low Capacitance ESD Protection Device
T0514VL
Document ID : DS-22V18
Revised Date : 2017/07/20
Revision : C



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