IS65C256 datasheet(3/11 Pages) ETC

3 / 11 page

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

03/24/04

IS65C256

ISSI®

OPERATING RANGE

Range

Ambient Temperature

VDD

–40°C to +85°C

5V ± 10%

–40°C to +105°C

5V ± 10%

–40°C to +125°C

5V ± 10%

DC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

VOH

Output HIGH Voltage

VDD = Min., IOH = –1.0 mA

2.4

—

VOL

Output LOW Voltage

VDD = Min., IOL = 2.1 mA

—

0.4

VIH

Input HIGH Voltage

2.2

VDD + 0.5

VIL

Input LOW Voltage(1)

–0.3

0.8

ILI

Input Leakage

GND

≤ VIN ≤ VDD

–10

µA

ILO

Output Leakage

GND

≤ VOUT ≤ VDD,

–10

µA

Outputs Disabled

Note:

1. VIL = –3.0V for pulse width less than 10 ns.

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-20 ns

Symbol

Parameter

Test Conditions

Min.

typ(2) Max.

Unit

ICC1

VDD Operating

VDD = Max.,

CS = VIL

—

Supply Current

IOUT = 0 mA, f = 0

—

ICC2

VDD Dynamic Operating

VDD = Max.,

CS = VIL

—

Supply Current

IOUT = 0 mA, f = fMAX

—

105

—

115

ISB1

TTL Standby Current

VDD = Max.,

—

(TTL Inputs)

VIN = VIH or VIL

—

CS = VIH, f = 0

—

ISB2

CMOS Standby

VDD = Max.,

—

0.5

Current (CMOS Inputs)

≥ VDD – 0.2V,

—

1.0

VIN

≥ VDD – 0.2V, or

—

1.5

VIN

≤ 0.2V, f = 0

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at VDD = 5V, TA = 25oC, tAA = 70 ns, and not 100% tested.

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