Feb.1999

1

2

3

5.3 MAX

(

φ16)

23±0.2

φ33 MAX

2-

φ3.2 MIN

φ2.5 MIN

φ2.0 MIN

1

2

3

φ8.7 MAX

1

2

3

GATE

TERMINAL

OUTLINE DRAWING

Dimensions

in mm

BCR20B

BCR20E

BCR20C

(16.2)

1

2

3

φ2.0 MIN

M6

×1.0

φ8.7 MAX

1

2

3

φ8.7 MAX

2-

φ3.2 MIN

23±0.2

33 MAX

φ2.0 MIN

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR20A, BCR20B, BCR20C, BCR20E

MEDIUM POWER USE

A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE

4.4

0.4

1.2

2.0

2.8

3.6

0.8

1.6

2.4

3.2

4.0

7

5

3

2

7

5

3

2

7

5

3

2

23

80

40

23

44

120

160

320

200

240

280

0

23

3

2

7

5

3

2

7

5

7

5

3

2

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

CONDUCTION TIME

(CYCLES AT 60Hz)

GATE CHARACTERISTICS

GATE CURRENT (mA)

200

160

120

80

40

180

140

100

60

20

0

160

60

–20

–40

0

20 40

80 100 120 140

TEST PROCEDURE

Ι, ΙΙ AND ΙΙΙ

GATE TRIGGER CURRENT

GATE TRIGGER

VOLTAGE

GATE TRIGGER CURRENT·VOLTAGE VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

PERFORMANCE CURVES