MJB42CT4 datasheet(2/8 Pages) ONSEMI

2 / 8 page

MJB41C (NPN), MJB42C (PNP)

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (Note 3.) (IC = 30 mAdc, IB = 0)

VCEO(sus)

100

–

Vdc

Collector Cutoff Current (VCE = 60 Vdc, IB = 0)

ICEO

–

0.7

mAdc

Collector Cutoff Current (VCE = 100 Vdc, VEB = 0)

ICES

–

100

µAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

–

mAdc

ON CHARACTERISTICS (Note 3.)

DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc)

DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc)

hFE

–

Collector–Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc)

VCE(sat)

–

1.5

Vdc

Base–Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc)

VBE(on)

–

2.0

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain – Bandwidth Product

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

3.0

–

MHz

Small–Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

–

3. Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2.0%.

Figure 1. Power Derating

T, TEMPERATURE (°C)

100

160

140

Figure 2. Switching Time Test Circuit

0.06

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

0.02

0.4

6.0

0.07

1.0

4.0

TJ = 25°C

VCC = 30 V

IC/IB = 10

0.5

0.3

0.1

0.05

0.1

0.6

1.0

td @ VBE(off) ≈ 5.0 V

0.03

0.7

2.0

0.2

2.0

120

1.0

2.0

3.0

4.0

+11 V

25 µs

-9.0 V

-4 V

SCOPE

VCC

+30 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

0.2

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