| Electronic Components Datasheet Search |
|
MM8006 Datasheet(PDF) 1 Page - Advanced Semiconductor |
|
|
|||||||||||||||||||||||||||||
MM8006 Datasheet(HTML) 1 Page - Advanced Semiconductor |
|
|
1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 3.0 mA 10 V BVCBO IC = 1.0 µA 15 V ICBO VCB = 15 V VCB = 15 V TA = 150 °C 0.01 1.0 µµµµA BVEBO IE = 10 µA 3.0 V hFE VCE = 1.0 V IC = 1.0 mA 25 --- VCE(SAT) IC = 10 mA IB = 1.0 mA 0.4 V VBE(SAT) IC = 10 mA IB = 1.0 mA 1.0 V ft VCE = 10 V IC = 4.0 mA f = 100 MHz 1000 MHz Cob VCB = 0 V f = 140 KHz VCB = 10 V f = 140 KHz 3.0 1.7 pF Cib VEB = 0.5 V f = 140 KHz 2.0 pF NF VCE = 6.0 V IC = 1.0 mA f = 60 MHz 6.0 dB Gpe VCB = 12 V IC = 6.0 mA f = 200 MHz 15 dB Pout ηηηη VCB = 15 V IC = 8.0 mA f = 500 MHz 30 25 mW % NPN SILICON HIGH FREQUENCY TRANSISTOR MM8006 DESCRIPTION: The ASI MM8006 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 50 mA VCBO 15 V PDISS 600 mW @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C PACKAGE STYLE TO-72 1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE |
Similar Part No. - MM8006 |
|
Similar Description - MM8006 |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |