PBSS5250T datasheet(4/7 Pages) PHILIPS

4 / 7 page

2003 Oct 09

Philips Semiconductors

Product speciﬁcation

50 V, 2 A

PNP low VCEsat (BISS) transistor

PBSS5250T

CHARACTERISTICS

Tj =25 °C; unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

VCB = −50 V; IE =0

−−−100

VCB = −50 V; IE = 0; Tj = 150 °C

−−−50

µA

IEBO

emitter cut-off current

VEB = −5 V; IC =0

−−−100

hFE

DC current gain

VCE = −2 V; IC = 0.5 A

200

−−

VCE = −2 V; IC = 1 A; note 1

200

−−

VCE = −2 V; IC = 2 A; note 1

130

−−

VCEsat

collector-emitter saturation

voltage

IC = −0.5 A; IB = −50 mA

−−−90

IC = −1 A; IB = −50 mA

−−−180

IC = −2 A; IB = −100 mA

−−−300

RCEsat

equivalent on-resistance

IC = −2 A; IB = −200 mA; note 1

−−

150

Ω

VBEsat

base-emitter saturation voltage

IC = −2 A; IB = −100 mA; note 1

−−−1.1

VBEon

base-emitter turn-on voltage

VCE = −2 V; IC = −1 A; note 1

−1.2

−−

transition frequency

IC = −100 mA; VCE = −5V;

f = 100 MHz

100

−−

MHz

collector capacitance

VCB = −10 V; IE =Ie = 0; f = 1 MHz

−−

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