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RN5003 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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RN5003 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() RN5003 2001-10-29 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit Collector cut-offcurrent ICBO ― VCB = 30V, IE = 0 ― ― 0.1 µA Emitter cut-off current IEBO ― VEB = 5V, IC = 0 0.385 0.50 0.714 mA Collector-emitter breakdown voltage V(BR)CES ― IC = 10mA 30 ― ― V hFE (1) VCE = 2V, IC = 0.5A 100 ― 400 DC current gain hFE (2) ― VCE = 2V, IC = 2.0A 30 ― ― ― Collector-emitter saturation voltage VCE (sat) ― IC = 1A, IB = 0.05A ― ― 0.5 V Base-emitter saturation voltage VBE (sat) ― IC = 1A, IB = 0.05A ― ― 1.2 V Transition frequency fT ― VCE = 2V, IC = 0.5A ― 120 ― MHz Collector output capacitance Cob ― VCB = 10V, IE = 0, f = 1 MHz ― 40 ― pF Resistor R ― ― 7 10 13 kΩ |
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