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JCS1HN50TC Datasheet(PDF) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS1HN50TC Datasheet(HTML) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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5 / 8 page ![]() R JCS1HN50TC 版本:201603B 5/8 特征曲线 ELECTRICAL CHARACTERISTICS (curves) 1 10 0.1 1 V GS Top 15V 10V 8V 7V 6.5V 6V 5.5V Bottom 5V Notes: 1. 250μs pulse test 2. T C=25 ℃ V DS [V] 2 4 6 8 10 0.1 1 10 Note s : 1.2 50μ s pu ls e t es t 2.V DS=40V 25℃ V GS [V] 150℃ 0 1 2 3 6 8 10 12 14 16 18 N ote :T j=25 ℃ V GS=10V V GS=20V I D [ A ] 0.1 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Not es : 1. 2 50μ s pul se t es t 2. V GS= 0V 25℃ 150℃ V S D [V] 10 -1 10 0 10 1 0.0 5.0 x 10 1 1.0 x 10 2 1.5 x 10 2 2.0 x 10 2 2.5 x 10 2 3.0 x 10 2 3.5 x 10 2 4.0 x 10 2 C iss = Cg s+Cgd (C d s=shorted) C o ss= Cd s+Cgd C rss= Cgd V DS Dr ain-Source Voltage [ V] 0 2 4 6 8 10 12 0 1 2 3 4 V DS=400V V DS=250V V DS=100V Q g Toltal Gate Charge [nC] On-Region Characteristics Transfer Characteristics On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics Gate Charge Characteristics |
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