SI5902DC datasheet(2/4 Pages) VISHAY

2 / 4 page

Si5902DC

Vishay Siliconix

www.vishay.com S FaxBack 408-970-5600

2-8

Document Number: 71053

S-21251—Rev. A, 05-Aug-02

SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS =VGS,ID = 250 mA

1.0

Gate-Body Leakage

IGSS

VDS =0 V, VGS = 20 V

100

Zero Gate Voltage Drain Current

IDSS

VDS =24 V,VGS =0 V

Zero Gate Voltage Drain Current

IDSS

VDS =24 V,VGS =0 V, TJ =85_C

On-State Drain Currenta

ID(on)

VDS ≥ 5V,VGS =10 V

Drain-Source On-State Resistancea

rDS(on)

VGS =10 V,ID =2.9 A

0.072

0.085

Ω

Drain-Source On-State Resistancea

rDS(on)

VGS =4.5 V, ID =2.2 A

0.120

0.143

Ω

Forward Transconductancea

gfs

VDS =15 V,ID =2.9 A

Diode Forward Voltagea

VSD

IS =0.9 A, VGS =0 V

0.8

1.2

Dynamicb

Total Gate Charge

7.5

Gate-Source Charge

Qgs

VDS =15 V, VGS =10 V,ID =2.9 A

0.8

Gate-Drain Charge

Qgd

1.0

Turn-On Delay Time

td(on)

Rise Time

VDD =15 V,RL =15 Ω

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 Ω

ID ≅ 1A,VGEN =10 V,RG =6 Ω

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = 0.9 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

1234

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 10thru5V

TC = 125_C

--55_C

25_C

Output Characteristics

Transfer Characteristics

VDS -- Drain-to-Source Voltage (V)

VGS -- Gate-to-Source Voltage (V)

SI5902DC Datasheet(PDF) 2 Page - Vishay Siliconix

SI5902DC Datasheet(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4

Datasheet Download

Link URL