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ST92F120 - SINGLE VOLTAGE FLASH & EEPROM

3.4 WRITE OPERATION EXAMPLE

Each operation (both Flash and EEPROM) is acti-

vated by a sequence of instructions like the follow-

ing:

CR, #OPMASK

;Operation selection

ADD1, #DATA1 ;1st Add and Data

ADD2, #DATA2 ;2nd Add and Data

...., ......

ADDn, #DATAn ;nth Add and Data

;n range = (1 to 16)

CR, #80h

;Operation start

The first instruction is used to select the desired

operation by setting its corresponding selection bit

in the Control Register (FCR for Flash operations,

ECR for EEPROM operations).

The load instructions are used to set the address-

es (in the Flash or in the EEPROM memory space)

and the data to be modified.

The last instruction is used to start the write oper-

ation, by setting the start bit (FWMS for Flash op-

erations, EWMS for EEPROM operation) in the

Control register.

Once selected, but not yet started, one operation

can be cancelled by resetting the operation selec-

tion bit. Any latched address and data will be reset.

Caution: during the Flash Page Program or the

EEPROM Page Update operation it is forbidden to

change the page address: only the last page ad-

dress is effectively kept and all programming will

effect only that page.

A summary of the available Flash and EEPROM

write operations are shown in the following tables:

Table 10. Flash Write Operations

Table 11. EEPROM Write Operations

Operation

Selection bit

Addresses and Data

Start bit

Typical Duration

Byte Program

FBYTE

1 byte

FWMS

µs

Page Program

FPAGE

From 1 to 16 bytes

FWMS

160

µs (16 bytes)

Sector Erase

FSECT

From 1 to 4 sectors

FWMS

1.5 s (1 sector)

Sector Erase Suspend

FSUSP

None

µs

Chip Erase

FCHIP

None

FWMS

3 s

Set Protection

PROT

From 1 to 4 bytes

FWMS

µs (4 bytes)

Operation

Selection bit

Addresses and Data

Start bit

Typical Duration

Page Update

EPAGE

From 1 to 16 bytes

EWMS

30 ms

Chip Erase

ECHIP

None

EWMS

70 ms

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