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THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE

PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

TPR 1000

1000 Watts, 45 Volts, Pulsed

Avionics 1090 MHz

GENERAL DESCRIPTION

CASE OUTLINE

The TPR 1000 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 1090 MHz. The device

has gold thin-film metallization for proven highest MTTF. The transistor

includes input returns for fast rise time. Low thermal resistance package

reduces junction temperature, extends life.

55KV, Style 1

Common Base

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C

2900 Watts

o2

Maximum Voltage and Current

BVces

Collector to Base Voltage

65 Volts

BVebo

Emitter to Base Voltage

3.5 Volts

Ic

Collector Current

80 Amps

Maximum Temperatures

Storage Temperature

- 65 to + 200 C

o

Operating Junction Temperature

+ 200 C

o

ELECTRICAL CHARACTERISTICS @ 25 C

O

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Pout

Pin

Power Input

Vcc = 45 Volts

250

Watts

Pg

η

c

t

r

VSWR

1

Power Out

F = 1090 MHz

1000

Watts

Power Gain

6.0

dB

Collector Efficiency

43

%

Rise Time

70

ns

Load Mismatch Tolerance

9:1

PW = 10

µsec

DF = 1%

F = 1030 MHz

Bvebo

3,4

BVces

Collector to Emitter Breakdown

Ic = 100mA

65

Volts

4

4

Emitter to Base Breakdown

Ie = 50mA

3.5

Volts

DC - Current Gain

Ic = 1000mA, Vce = 5 V

10

Thermal Resistance

0.06

C/W

o

Note 1: At rated output power and pulse conditions

2: At rated pulse conditions

3: Cannot measure due to input return

4: Per Side

Issue A June 1997