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110RKI Datasheet(PDF) 2 Page - International Rectifier

Part # 110RKI
Description  PHASE CONTROL THYRISTORS
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

110RKI Datasheet(HTML) 2 Page - International Rectifier

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110/111RKI Series
2
Bulletin I25152 rev. E 09/03
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
DRM/VRRM, max. repetitive
V
RSM , maximum non-
I
DRM/IRRM max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J = TJ max.
VV
mA
40
400
500
110/111RKI
80
800
900
20
120
1200
1300
I
T(AV)
Max. average on-state current
110
A
180° conduction, half sine wave
@ Case temperature
90
°C
I
T(RMS) Max. RMS on-state current
172
DC @ 83°C case temperature
I
TSM
Max. peak, one-cycle
2080
t = 10ms
No voltage
non-repetitive surge current
2180
A
t = 8.3ms
reapplied
1750
t = 10ms 100% V
RRM
1830
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
21.7
t = 10ms
No voltage
Initial T
J = TJ max.
19.8
t = 8.3ms
reapplied
15.3
t = 10ms 100% V
RRM
14.0
t = 8.3ms
reapplied
I2√t
Maximum I2√t for fusing
217
KA2√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1 Low level value of threshold
voltage
V
T(TO)
2 High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.57
V
Ipk= 350A, TJ = TJ max., tp = 10ms sine pulse
I
H
Maximum holding current
200
I
L
Typical latching current
400
0.82
(16.7% x π x I
T(AV) < I < π x IT(AV)), TJ = TJ max.
2.16
(16.7% x π x I
T(AV) < I < π x IT(AV)), TJ = TJ max.
1.70
(I > π x I
T(AV)),TJ = TJ max.
Parameter
110/111RKI
Units Conditions
1.02
(I > π x I
T(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA
T
J = 25°C, anode supply 6V resistive load
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current
T
J = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
I
TM = 50A, TJ = TJ max., di/dt = -5A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 25Ω
Parameter
110/111RKI
Units Conditions
td
Typical delay time
1
Switching
tq
Typical turn-off time
110
µs
300
A/µs



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