Semiconductor Components Industries, LLC, 2016

Publication Order Number:



December 2016 Rev. 1.0

PCFFS05120AF

1

www.onsemi.com

Notes:

1. Based on TO-247 package of ON Semiconductor

2. Tested 100% on wafer

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Reverse Blocking Voltage

1200

-

-

V

Forward Voltage

1.20

-

1.75

V

Reverse Current

-

-

200

A

PCFFS05120AF

Silicon Carbide Schottky Diode



1200 V, 5 A

Features

• Avalanche Rated 55 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery / No Forward Recovery

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and

higher reliability compared to Silicon. No reverse recovery cur-

rent, temperature dependent switching characteristics, and

excellent thermal performance sets Silicon Carbide as the next

generation of power semiconductor. System benefits include

highest efficiency, faster operation frequency, increased power

density, reduced EMI, and reduced system size and cost.

Die Information

• Wafer Diameter

6 inch

• Die Size

1,690 x 1,690

m (include Scribe Lane)

• Metallization



· Top

Ti / TiN / AI 4

m

· Back

Ti/ NiV /Ag

• Die Thickness

Typ. 200

m

• Bonding Pad Size



· Anode

1,110

 1,110 m

· Anode

12mil

 1

Anode