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NTMS4404 Datasheet(PDF) 2 Page - ON Semiconductor

Part # NTMS4404
Description  Power MOSFET
PDF  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMS4404 Datasheet(HTML) 2 Page - ON Semiconductor

  NTMS4404 Datasheet HTML 1Page - ON Semiconductor NTMS4404 Datasheet HTML 2Page - ON Semiconductor NTMS4404 Datasheet HTML 3Page - ON Semiconductor NTMS4404 Datasheet HTML 4Page - ON Semiconductor NTMS4404 Datasheet HTML 5Page - ON Semiconductor NTMS4404 Datasheet HTML 6Page - ON Semiconductor  
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NTMS4404N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
25
mV/
°C
Zero Gate Voltage Drain Current
IDSS
V
0V V
30 V
TJ = 25°C
1.0
mA
VGS = 0 V, VDS = 30 V
TJ = 100°C
5.0
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = $20 V
$100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.0
2.2
3.0
V
Gate Threshold Temperature Coefficient
VGS(TH)/TJ
−5.0
mV/
°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 12 A
9.7
11.5
m
W
()
VGS = 4.5 V, ID = 6.0 A
15.5
17.5
Forward Transconductance
gFS
VDS = 15 V, ID = 12 A
17.5
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
1975
2500
pF
Output Capacitance
COSS
VGS = 0 V, f = 1 MHz, VDS = 24 V
575
750
Reverse Transfer Capacitance
CRSS
GS
,,
DS
180
300
Total Gate Charge
QG(TOT)
50
70
nC
Threshold Gate Charge
QG(TH)
V
=10V V
=24V I =12A
2.4
Gate−to−Source Charge
QGS
VGS = 10 V, VDS = 24 V, ID = 12 A
7.5
Gate−to−Drain Charge
QGD
16
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 4)
Turn−On Delay Time
td(ON)
15
25
ns
Rise Time
tr
VGS = 10 V, VDS = 24 V, ID = 12 A,
25
50
Turn−Off Delay Time
td(OFF)
VGS = 10 V, VDS = 24 V, ID = 12 A,
RG = 2.5 W
35
55
Fall Time
tf
15
30
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
td(ON)
20
ns
Rise Time
tr
VGS = 4.5 V, VDS = 24 V, ID = 6.0 A,
80
Turn−Off Delay Time
td(OFF)
VGS = 4.5 V, VDS = 24 V, ID = 6.0 A,
RG = 2.5 W
25
Fall Time
tf
15
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 4)
Forward Diode Voltage
VSD
V
=0V I =60A
TJ = 25°C
0.80
1.1
V
VGS = 0 V, IS = 6.0 A
TJ = 125°C
0.65
Reverse Recovery Time
tRR
40
55
ns
Charge Time
ta
VGS = 0 V, dISD/dt = 100 A/ms,
23
Discharge Time
tb
VGS
0 V, dISD/dt
100 A/
ms,
IS = 6.0 A
17
Reverse Recovery Charge
QRR
0.05
mC
NOTES:
3. Pulse Test: pulse width
v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.



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