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SP823C Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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SP823C Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 7 page ![]() Suface Mount Package. S mHop Microelectronics C orp. a SP823C Symbol VDS VGS IDM 1.5 W A PD °C 930 -55 to 150 ID Units Parameter 80 80 163 °C/W V V ±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 80V 80A 5.5 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed a c A Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance, Junction-to-Case R JC www.samhop.com.tw Aug,27,2015 1 Details are subject to change without notice. TC=25°C TC=70°C A TC=70°C W Green Product 64 53 EAS Single Pulse Avalanche Energy d mJ 83 4 3 2 1 8 7 6 5 N-Channel Logic Level Enhancement Mode Field Effect Transistor c Ver 1.0 DFN 5x6 PIN1 |
Similar Part No. - SP823C |
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Similar Description - SP823C |
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