SP4510DG datasheet(2/7 Pages) SAMHOP

2 / 7 page

4 Symbol

Min

Typ

Max

Units

BVDSS

100

IGSS

±100

VGS(th)

2.5

gFS

VSD

CISS

1460

COSS

570

CRSS

Qgs

Qgd

tD(ON)

8.4

tD(OFF)

7.8

Gate-Drain Charge

VDS=25V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=50V

ID=1A

VGS=10V

RGEN= 2.5 ohm

Total Gate Charge

Rise Time

Turn-Off DelayTime

VDS=50V,ID=24A,VGS=10V

Fall Time

Turn-On DelayTime

m ohm

VGS=10V , ID=24A

VDS=10V , ID=24A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=80V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body leakage current

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

4.5

f=1.0MHz

VDS=50V,ID=24A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS

VGS=0V,IS=8A

1.3

www.samhop.com.tw

Dec,08,2016

SP4510DG

Ver 1.0

3.5

0.82

Notes

a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.

b.Guaranteed by design, not subject to production testing.

c.Drain current limited by maximum junction temperature.

d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)

e.Mounted on FR4 Board of 1 inch2 , 2oz.

SP4510DG Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

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