SI7415DN datasheet(2/4 Pages) VISHAY

2 / 4 page

Si7415DN

Vishay Siliconix

New Product

www.vishay.com

Document Number: 71691

S-04881—Rev. A, 22-Oct-01

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

–1

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

VDS = –48 V, VGS = 0 V

–1

Zero Gate Voltage Drain Current

IDSS

VDS = –48 V, VGS = 0 V, TJ = 70_C

–5

On-State Drain Currenta

ID(on)

VDS v –5 V, VGS = –10 V

–20

VGS = –10 V, ID = –5.7 A

0.054

0.065

Drain-Source On-State Resistancea

rDS(on)

VGS = –4.5 V, ID = –4.4 A

0.090

0.110

Forward Transconductancea

gfs

VDS = –15 V, ID = –5.7 A

Diode Forward Voltagea

VSD

IS = –3.2 A, VGS = 0 V

–0.8

–1.2

Dynamicb

Total Gate Charge

Gate-Source Charge

Qgs

VDS = –30 V, VGS = –10 V, ID = –5.7 A

Gate-Drain Charge

Qgd

3.2

Turn-On Delay Time

td(on)

Rise Time

VDD = –30 V, RL = 30 W

Turn-Off Delay Time

td(off)

VDD = –30 V, RL = 30 W

ID ^ –1 A, VGEN = –10 V, RG = 6 W

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = –3.2 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

1234

VGS = 10 thru 5 V

TC = 125_C

3 V

–55

4 V

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

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