IQ 800 L

IQ 801 L

IQ 802 L

Si – photodiode with

integrated transimpedance amplifier

characteristics:

• SI-photodiode with integrated low noise JFET-amplifier

• integrated feedback resistor and capacitor

• decadic staggered responsivity

• spectral range VIS and NIR

• very low offset- and driftparameters

• high dynamic range

• duale power supply

• hermetically sealed TO-5 package

• assembly isolated to ground

• collimator lense

• components are in conformity with ROHS and WEEE

applications:

• common light-/radiation measuring applications

• detevtor for measuring of low radiation intensities with high signal to noise level

• spectroscopy

• medical diagnostics

maximum ratings:

• operating voltage

±18 V

• operating temperature range

-25°C … +85°C

• storage temperature range

-40°C … +100°C

• welding temperature (3s)

260°C