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CRO2AM Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # CRO2AM
Description  LOW POWER USE PLANAR PASSIVATION TYPE
PDF  5 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CRO2AM Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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Sep.2000
MITSUBISHI SEMICONDUCTOR
〈THYRISTOR〉
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
102
10–2
100
101
101
7
5
3
2
10–1
7
5
3
2
100
7
5
3
2
7
5
3
2
10–223 5 7
23 5 7
10–1
102
23 5 7
23 5 7
VFGM = 6V
VGT = 0.8V
IGT = 100
µA
(Tj = 25
°C)
PGM = 0.1W
PG(AV) = 0.01W
VGD = 0.2V
IFGM = 0.1A
23
10–3
5710–2 23 5 710–1 23 5 7 100
200
0
80
100
120
140
160
180
40
60
20
23
100
57 101 23 5 7 102 23 5 7 103
200
160
140
120
60
80
20
0
160
–40 –20
20
80
140
120
40
100
180
060
40
100
# 1
# 2
IGT (25
°C)
# 1 32
µA
# 2
9
µA
TYPICAL EXAMPLE
140
40
–40
–60
–20 0
20
60 80 100 120
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
TYPICAL EXAMPLE
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0
160
–40 –20
20
80
140
120
0.2
0.5
0.9
060
40
100
TYPICAL EXAMPLE
DISTRIBUTION
0.8
0.6
0.3
0.2
0.1
0.7
0.5
0.4
0
0.4
0
0.1
0.2
0.3
θ
360
°
θ = 30°
60
°
120
°
90
°
180
°
RESISTIVE, INDUCTIVE LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TIME (s)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
GATE CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
See
∗3
GATE CHARACTERISTICS



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