ESJW08

2.0A 8.0kV 150nS

High Current High Voltage Silicon Rectifier Diodes

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GETE ELECTRONIC CO.,LTD

Http://www.getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628

FAX:0086-20-8184 9638

2017-10 1 / 2

INTRODUCE:

HVGT high voltage silicon rectifier diodes is made

of high quality glass passivated chip and high

reliability epoxy resin sealing structure, and

through professional testing equipment inspection

qualified after to customers.

FEATURES:

1. Avalanche characteristic.

2. High current, low forward voltage.

3. High frequency, Fast recovery.

4. Conform to RoHS and SGS.

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

APPLICATIONS:

1. High voltage multiplier circuit

2. Electrostatic generator circuit .

3. General purpose high voltage rectifier.

4. X-ray power supply.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: welding axis.

3. Net weight: 2.55 grams (approx).

SHAPE DISPLAY:

SIZE: (Unit:mm)

HVGT NAME: DO-722

MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

Repetitive Peak Renerse Voltage

8.0

kV

Non-Repetitive Peak Renerse Voltage

--

kV

Average Forward Current Maximum

2.0

A

--

A

Non-Repetitive Forward Surge Current

50

A

Junction Temperature

150

°C

Allowable Operation Case Temperature

Tc

-40~+150

°C

Storage Temperature

-40~+150

°C

Items

Symbols

Condition

Data value

Units

Maximum Forward Voltage Drop

9.6

V

Maximum Reverse Current

2.0

uA

10

uA

Maximum Reverse Recovery Time

150

nS

Junction Capacitance

--

pF