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BCR25B Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # BCR25B
Description  MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
PDF  4 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

BCR25B Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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Feb.1999
100
23
101
57 102 23 5 7 103 23 5 7 104
3
2
101
7
5
3
2
7
5
7
5
3
2
10–1
VGD = 0.2V
PGM = 5.0W
PG(AV) = 0.5W
VGM = 10V
VGT = 3.0V
IGM = 2A
IFGT I
IRGT III
IRGT I
23
10–1
57 100 23 5
23
102
57 103
7101 23 5 7 102
1.0
0.8
0.9
0.7
0.6
0.5
0.3
0.4
0.2
0.1
0
GATE CHARACTERISTICS
GATE CURRENT (mA)
GATE TRIGGER CURRENT·VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
200
160
120
80
40
180
140
100
60
20
0
160
60
–20
–40
0
20 40
80 100 120 140
TEST PROCEDURE
Ι, ΙΙ AND ΙΙΙ
GATE TRIGGER CURRENT
GATE TRIGGER VOLTAGE
50
30
25
15
5
0
40
0
10
20
30
35
10
20
35
40
45
515
25
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
0
32
0
416
24
28
40
80
140
812
20
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
MAXIMUM ON-STATE POWER
DISSIPATION
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR25A)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
RMS ON-STATE CURRENT (A)
160
120
100
60
20
0
32
0
416
24
28
40
80
140
812
20
BX 20-06
100 100 t3.0
120 120 t3.0
NATURAL CONVECTION
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
WITHOUT
MICA PLATE
WITH GREASE
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR25A, BCR25B
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE



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