IRFPS38N60L

PD - 94630

SMPS MOSFET

Features and Benefits

• SuperFast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

• Higher Gate voltage threshold offers improved noise immunity

.

02/12/03

www.irf.com

1

S

D

G

Applications

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control applications

SUPER TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

38

24

A

Pulsed Drain Current

™

150

540

W

Linear Derating Factor

4.3

W/°C

Gate-to-Source Voltage

±30

V

dv/dt

Peak Diode Recovery dv/dt

d

13

V/ns

Operating Junction and

-55 to + 150

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Mounting torque, 6-32 or M3 screw

1.1(10)

N•m (lbf•in)

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

–––

–––

38

MOSFET symbol

(Body Diode)

A

showing the

Pulsed Source Current

–––

–––

150

integral reverse

(Body Diode)

Ã

c

p-n junction diode.

Diode Forward Voltage

–––

–––

1.5

V

f

Reverse Recovery Time

–––

170

250

ns

–––

420

630

f

Reverse Recovery Charge

–––

830

1240

f

–––

2600 3900

f

Reverse Recovery Current

–––

9.1

14

A

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

600V

120m

Ω

170ns

38A