2N6299 datasheet(1/2 Pages) MICROSEMI

Part #	2N6299

Description	PNP DARLINGTON POWER SILICON TRANSISTOR

PDF	2 Pages

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA

PNP DARLINGTON POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/540

Devices

Qualified Level

2N6298

2N6299

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

2N6298 2N6299

Units

Collector-Emitter Voltage

VCEO

60

80

Vdc

Collector-Base Voltage

VCBO

60

80

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Base Current

IB

120

mAdc

Collector Current

IC

8.0

Adc

Total Power Dissipation @ TC = 0

0C (1)

@

TC = 100

0C

PT

75

32

W

Operating & Storage Junction Temperature Range

TOP,TSTG

-65 to +175

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

RθJC

2.33

0C/W

1) Derate linearly 0.428 W/

0C above TC > 00C

TO-66* (TO-213AA)

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (TC = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 100 mAdc

2N6298

2N6299

V(BR)CEO

60

80

Vdc

Collector-Emitter Cutoff Current

VCE = 30 Vdc

2N6298

VCE = 40 Vdc

2N6299

ICEO

0.5

mAdc

Collector-Emitter Cutoff Current

VCE = 60 Vdc, VBE = 1.5 Vdc

2N6298

VCE = 80 Vdc, VBE = 1.5 Vdc

2N6299

ICEX

0.5

mAdc

Emitter-Base Cutoff Current

VEB = 5.0 Vdc

IEBO

2.0

mAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

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