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NTP4302 Datasheet(PDF) 2 Page - ON Semiconductor

Part # NTP4302
Description  NTP4302, NTB4302
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTP4302 Datasheet(HTML) 2 Page - ON Semiconductor

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NTP4302, NTB4302
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
−
−
25
−
−
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
−
−
−
1.0
10
µAdc
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
−
±100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
−
1.9
−3.8
3.0
−
Vdc
mV/
°C
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 37 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 4.5 Vdc, ID = 10 Adc)
RDS(on)
−
6.8
6.8
9.5
9.3
9.3
12.5
m
Ω
Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 20 Adc)
gFS
−
40
−
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
24 Vd
V
0Vd
Ciss
−
2050
2400
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
−
640
800
Transfer Capacitance
f = 1.0 MHz)
Crss
−
225
310
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(on)
−
10
18
ns
Rise Time
(VDD = 24 Vdc, ID = 20 Adc,
tr
−
22
35
Turn−Off Delay Time
(VDD 24 Vdc, ID
20 Adc,
VGS = 10 Vdc, RG = 2.5 Ω) (Note 3)
td(off)
−
45
75
Fall Time
tf
−
35
70
Turn−On Delay Time
td(on)
−
18
−
ns
Rise Time
(VDD = 24 Vdc, ID = 10 Adc,
tr
−
70
−
Turn−Off Delay Time
(VDD 24 Vdc, ID
10 Adc,
VGS = 4.5 Vdc, RG = 2.5 Ω) (Note 3)
td(off)
−
32
−
Fall Time
tf
−
30
−
Gate Charge
(V
24 Vd
I
37 Ad
QT
−
28
−
nC
(VDS = 24 Vdc, ID = 37 Adc,
VGS = 4.5 Vdc) (Note 3)
Qgs
−
7.5
−
VGS = 4.5 Vdc) (Note 3)
Qgd
−
19
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
−
−
0.90
0.75
1.3
−
Vdc
Reverse Recovery Time
(I
20 Ad
V
0Vd
trr
−
37
−
ns
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 3)
ta
−
21
−
dIS/dt = 100 A/µs) (Note 3)
tb
−
16
−
Reverse Recovery Stored Charge
QRR
−
0.035
−
µC
3. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.



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