Power Transistors

1

Publication date: November 2002

SJD00298AED

2SC5841

Silicon NPN epitaxial planar type

Power supply for Audio & Visual equipments

such as TVs and VCRs

Industrial equipments such as DC-DC converters

■ Features

• High-speed switching (t

• Low collector-emitter saturation voltage V

CE(sat)

• Superior forward current transfer ratio h

• Allowing supply with the radial taping (MT-4)

■ Absolute Maximum Ratings T

C

= 25°C

■ Electrical Characteristics T

C

= 25°C ± 3°C

123

C 1.0

1.0

±0.2

Unit: mm

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

V

Collector-base cutoff current (Emitter open)

100

µA

Collector-emitter cutoff current (Base open)

= 80 V, I

B

= 0

100

µA

Forward current transfer ratio

50



80

280

= 4 V, I

C

= 3 A

20

Collector-emitter saturation voltage

0.7

V

Transition frequency

100

MHz

Turn-on time

= 1 A, Resistance loaded

0.2

µs

Storage time

0.9

µs

Fall time

0.15

µs

Internal Connection

B

C

E

Marking Symbol: C5841

1: Base

2: Collector

3: Emitter

MT-4-A1 Package

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

80

V

Collector-emitter voltage (Base open)

80

V

Emitter-base voltage (Collector open)

5V

Collector current

3A

Peak collector current

5A

Collector power

15

W

dissipation

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.