1

Publication date: November 2002

SJC00290AED

Transistors

2SC5863

Silicon NPN epitaxial planar type

For general amplification

■ Features

• High collector-emitter voltage (Base open) V

CEO

• High transition frequency f

T

■ Absolute Maximum Ratings T

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

300

V

Collector-emitter voltage (Base open)

300

V

Emitter-base voltage (Collector open)

7V

Collector current

70

mA

Peak collector current

100

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Unit: mm

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

300

V

Emitter-base voltage (Collector open)

V

Collector-emitter cutoff current (Base open)

= 120 V, I

B

= 01

µA

60

220



Collector-emitter saturation voltage

1.2

V

Collector output capacitance

10

pF

(Common base, input open circuited)

Transition frequency

= 10 V, I

E

= −10 mA, f = 200 MHz

50

80

MHz

Rank

Q

R

60 to 150

100 to 220

0.40

+0.10

–0.05

2

1

3

(0.95) (0.95)

2.90

+0.20

–0.05

0.16

+0.10

–0.06

10˚

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

Marking Symbol: 7H

■ Electrical Characteristics T

a

= 25°C ± 3°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification