30CTH03 datasheet(2/7 Pages) IRF

2 / 7 page

30CTH03

Bulletin PD-20770 rev. A 08/03

www.irf.com

VBR, Vr

Breakdown Voltage,

300

IR = 100µA

Blocking Voltage

Forward Voltage

1.0 1.25

IF = 15A, TJ = 25°C

0.85 0.95

IF = 15A, TJ = 125°C

Reverse Leakage Current

µA

VR = VR Rated

200

µA

TJ = 125°C, VR = VR Rated

Junction Capacitance

VR = 300V

Series Inductance

Measured lead to lead 5mm from package body

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameters

Min Typ Max

Test Conditions

Units

Parameters

Min

Typ

Max

Units

Max. Junction Temperature Range

175

°C

TStg

Max. Storage Temperature Range

- 65

175

RthJC

Thermal Resistance, Junction to Case

Per Diode

1.4

°C/W

Thermal - Mechanical Characteristics

trr

Reverse Recovery Time

IF = 1A, diF/dt = 50A/µs, VR = 30V

IF = 1A, diF/dt = 100A/µs, VR = 30V

-33

TJ = 25°C

-48

TJ = 125°C

IRRM

Peak Recovery Current

2.8

TJ = 25°C

6.5

TJ = 125°C

Qrr

Reverse Recovery Charge

TJ = 25°C

160

TJ = 125°C

Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)

Parameters

Min Typ Max

Test Conditions

Units

IF = 15A

diF/dt = 200A/µs

VR = 200V

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