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ATT505 Datasheet(PDF) 1 Page - Power Semiconductors |
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ATT505 Datasheet(HTML) 1 Page - Power Semiconductors |
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1 / 4 page  PHASE CONTROL MODULE ATT505 Repetitive voltage up to 1800 V Mean forward current 490 A Surge current 13 kA FINAL SPECIFICATION apr 17 - ISSUE : 02 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM Repetitive peak reverse/off-state voltage 130 1800 V V RSM Non-repetitive peak reverse voltage 130 1900 V I RRM/DRM Repetitive peak reverse/off-state current 130 50 mA CONDUCTING I T (AV) Mean forward current 180° sin, 50 Hz, Tc=85°C, double side cooled 490 A I T (AV) Mean forward current 180° sin, 50 Hz, Th=55°C, double side cooled 722 A I TSM Surge forward current Sine wave, 10 ms 130 13 kA I² t I² t without reverse voltage 845 x 10 3 A²s V T On-state voltage On-state current = 1570 A 25 1,50 V V T(TO) Threshold voltage 130 0,95 V r T On-state slope resistance 130 0,300 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 1000 A; gate 10V, 5 W 130 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 130 500 V/µs t d Gate controlled delay time, typical VD=100V; gate source 25V, 10 W , tr=.5 µs 25 3,0 µs t q Circuit commutated turn-off time, typical dv/dt = 20 V/µs linear up to 75% VDRM 160 µs Q rr Reverse recovery charge di/dt = -20 A/µs, I= 500 A 130 µC I rr Peak reverse recovery current VR= 100V A I H Holding current, typical VD=12V, gate open circuit 25 300 mA I L Latching current, typical VD=12V, tp=30µs 25 700 mA GATE V GT Gate trigger voltage VD=12V 25 3,50 V I GT Gate trigger current VD=12V 25 250 mA V GD Non-trigger gate voltage, min. VD=VDRM 130 0,25 V V FGM Peak gate voltage (forward) 30 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) 5 V P GM Peak gate power dissipation Pulse width 100 µs 150 W P G Average gate power dissipation 2 W MOUNTING R th(j-c) Thermal impedance, DC Junction to case, per element 70,0 °C/kW R th(c-h) Thermal impedance Case to heatsink, per element 20,0 °C/kW T j Operating junction temperature -30 / 130 °C V ins RMS insulation voltage 50 hz , circuit to base, all terminal shorted 25 3000 V T Mounting torque Case to heatsink 4 to 6 kN T Mounting torque Busbars to terminal 12 to 18 kN Mass 1500 g ORDERING INFORMATION : ATT505 S 18 standard specification VRRM/100 POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - sales@poseico.com |
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