BAV99WT1 datasheet(2/4 Pages) ONSEMI

2 / 4 page

BAV99WT1, BAV99RWT1

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C

Derate above 25

°C

200

1.6

mW/

°C

Thermal Resistance Junction−to−Ambient

RqJA

625

°C/W

Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C

Derate above 25

°C

300

2.4

mW/

°C

Thermal Resistance Junction−to−Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

− 65 to +150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage (I(BR) = 100 mA)

V(BR)

−

Vdc

Reverse Voltage Leakage Current

(VR = 70 Vdc)

(VR = 25 Vdc, TJ = 150°C)

(VR = 70 Vdc, TJ = 150°C)

−

2.5

mAdc

Diode Capacitance

(VR = 0, f = 1.0 MHz)

−

1.5

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

−

715

855

1000

1250

mVdc

Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 W

trr

−

6.0

Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)

VFR

−

1.75

1. FR−5 = 1.0

0.75 0.062 in.

2. Alumina = 0.4

0.3 0.024 in. 99.5% alumina.

Notes: (a) A 2.0 k

W variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: (b) Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: (c) tp » trr

+10 V

2 k

820 W

0.1 mF

DUT

100 mH

0.1 mF

50 W OUTPUT

PULSE

GENERATOR

50 W INPUT

SAMPLING

OSCILLOSCOPE

10%

90%

trr

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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