STF8235A datasheet(2/7 Pages) SAMHOP

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Symbol

Min

Typ

Max

Units

BVDSS

IGSS

±10

VGS(th)

0.5

RDS(ON)

Drain-Source On-State Resistance

IDSS

Gate Threshold Voltage

VDS=VGS , ID=1.0mA

VDS=16V , VGS=0V

VGS= ±12V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

ON CHARACTERISTICS

STF8235A

0.7

1.5

gFS

230

861

Qgs

3536

Qgd

2020

tD(ON)

3.5

tD(OFF)

Gate-Drain Charge

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=20V

ID=5.5A

VGS=10V

RGEN=6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

VDS=5V , ID=5.5A

Forward Transconductance

VGS=4.5V , ID=5.5A

m ohm

VDS=20V,ID=11A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VSD

Diode Forward Voltage

VGS=0V,IS=11A

0.81

1.2

www.samhop.com.tw

Jul,08,2015

5.3

6.9

4.0

Ver 1.0

VGS=4.0V , ID=5.5A

m ohm

5.4

7.0

VGS=3.7V , ID=5.5A

m ohm

VGS=2.5V , ID=5.5A

m ohm

6.3

8.5

4.1

4.7

VGS=3.1V , ID=5.5A

m ohm

5.7

7.6

4.3

5.5

7.2

4.2

26.5

VDS=20V,ID=11A,VGS=4.5V

Notes

a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.

b.Guaranteed by design, not subject to production testing.

c.Drain current limited by maximum junction temperature.

d.Mounted on FR4 Board of 1 inch2 , 2oz.

STF8235A Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

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