CGY2106TS datasheet(4/16 Pages) PHILIPS

4 / 16 page

2000 Aug 28

Philips Semiconductors

Preliminary speciﬁcation

High dynamic range dual LNA MMIC

CGY2106TS

DC CHARACTERISTICS FROM JUNCTION TO AMBIENT

Tamb =25 °C; unless otherwise speciﬁed. Parameters are guaranteed when using external components and application

board shown in Chapter “Test and application information”.

AC CHARACTERISTICS

Vsupply = 5.0 V; Vneg = −5.0 V; both LNAs biased and Zo =50 Ω; duty cycle 100%; Tamb =25 °C. Parameters are

guaranteed when using external components and application board shown in chapter “Test and application information”;

unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

Isupply

positive supply voltage currents (for each LNA)

Vsupply = 5.0 V;

Vneg = −5.0 V

Ineg

negative supply voltage currents (for each LNA)

Vsupply = 5.0 V;

Vneg = −5.0 V

−

0.8

1.1

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

frequency

800

−

920

MHz

small signal gain

14.6

16.1

17.6

G800

small signal gain at f = 800 MHz

15.8

16.7

17.6

ISOr

reverse isolation

−

ISOi-i

isolation between inputs

−

noise ﬁgure

−

0.5

0.7

IP3i

input third order intercept point

∆f= ±0.5 MHz

11.5

−

dBm

S11

input reﬂection coefﬁcient

Ω source

−−8.5

−

S22

output reﬂection coefﬁcient

Ω load

−−20

−

∆S

21(T)

small signal gain variation with temperature

−40 °CTamb < +85 °C

−±0.5

−

∆NF

(T)

noise ﬁgure variation with temperature

−40 °C<Tamb +85 °C

−±0.20 −

∆IP3

i(T)

input third order intercept point variation with

temperature

−40 °C<Tamb < +85 °C −±0.40 −

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