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EN29F002 Datasheet(PDF) 25 Page - List of Unclassifed Manufacturers

Part # EN29F002
Description  2 Megabit (256K x 8-bit) Flash Memory
PDF  32 Pages
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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EN29F002 Datasheet(HTML) 25 Page - List of Unclassifed Manufacturers

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4800 Great America Parkway, Suite 202
Tel: 408-235-8680
Santa Clara, CA 95054
Fax: 408-235-8685
25
EN29F002 / EN29F002N
Rev. C, Issue Date: 2001/07/05
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Limits
Parameter
Typ
Max
Unit
Comments
Sector Erase Time
0.3
5
sec
Excludes 00H programming prior to
Chip Erase Time
3
35
sec
erasure
Byte Programming Time
7
200
µs
Excludes system level overhead
Chip Programming Time
2
5
sec
Erase/Program Endurance
100K
cycles
Minimum 100K cycles guaranteed
Table 12. LATCH UP CHARACTERISTICS
Parameter Description
Min
Max
Input voltage with respect to Vss on A9 and OE , and RESET
-1.0 V
12.0 V
Input voltage with respect to Vss on all other pins
-1.0 V
Vcc + 1.0 V
Vcc Current
-100 mA
100 mA
Note : These are latch up characteristics and the device should never be put under
these conditions. Refer to Absolute Maximum ratings for the actual operating limits.
Table 13. 32-PIN PLCC PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
4
6
pF
COUT
Output Capacitance
VOUT = 0
8
12
pF
CIN2
Control Pin Capacitance
VIN = 0
8
12
pF
Table 14. 32-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF



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