MJD122 datasheet(1/1 Pages) TGS

Part #	MJD122

Description	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

PDF	1 Pages

Scroll/Zoom	100%

Manufacturer	TGS [Tiger Electronic Co.,Ltd]

Direct Link	http://www.tgselec.com

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1 / 1 page

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

±100

V

Collector-Emitter Voltage

V

CEO

±100

V

Emitter-Base Voltage

V

EBO

±5.0

V

Collector Current

I

C

±5.0

A

Base Current

I

B

±0.1

A

Total Dissipation at

P

tot

30

W

Max. Operating Junction Temperature

T

j

150

oC

Storage Temperature

T

stg

-55~150

oC

MJD122/MJD127

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

I

CEO

V

CE = ±100V, IB = 0

—

±0.5

mA

Collector Cut-off Current

I

CBO

V

CB = ±100V, IE = 0

—

±0.2

mA

Emitter Cut-off Current

I

EBO

V

EB = ±5.0V, IC = 0

—

2.0

mA

Collector-Emitter Sustaining Voltage

V

CEO

I

C = ±30mA, IB = 0

±100

—

V

DC Current Gain

h

FE(1)

V

CE = ±5.0V, IC = ±0.5A

1000

—

h

FE(2)

V

CE = ±3.0V, IC = ±3.0A

1000

—

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C = ±3.0A, IB = ±12mA

—

±1.5

V

I

C = ±5.0A, IB = ±20mA

—

±2.5

Base-Emitter Voltage

V

BE(on)

V

CE = ±3.0V, IC = ±3.0A

—

±2.5

V

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

O

( Ta = 25 C)

O

Hammer Drivers,Audio Amplifiers Applications

Power Linear and Switching Applications

Product specification

TO-252

B

E

C

TIGER ELECTRONIC CO.,LTD

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