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2N5302 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2N5302
Description  isc Silicon NPN Power Transistors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N5302 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
2N5302
DESCRIPTION
·
Low Collector Saturation Voltage-
: VCE(sat)= 0.75V(Max.)@ IC= 10A
·
Wide Area of Safe Operation
·
Complement to Type 2N4399
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·
Designed for use in power amplifier and switching circuits
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-a
Thermal Resistance,Junction to Ambient
34
℃
/W
Rth j-c
Thermal Resistance,Junction to Case
0.875
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
30
A
IB
Base Current-Continuous
7.5
A
PC
Collector Power Dissipation@TC=25℃
200
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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