Switching Diodes

194

MA4X193 (MA193)

Silicon epitaxial planar type

Silicon epitaxial planar type

I Features

• Mini type 4-pin package, contained four elements

• Short reverse recovery time t

rr

• Bridge diodes for surface mounting

• Anode common + cathode common composite product

I Absolute Maximum Ratings T

1: Cathode 1

3: Anode 3

Anode 2

Cathode 4

2: Cathode 2, 3

4: Anode 1, 4

Mini Type Package (4-pin)

Unit : mm

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

80

V

Repetitive peak reverse voltage

80

V

Average forward current

70

mA

Repetitive peak forward current

150

mA

Non-repetitive peak forward

250

mA

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

100

nA

Forward voltage (DC)

1.2

V

Reverse voltage (DC)

V

Terminal capacitance

15

pF

10

ns

Ω

I Electrical Characteristics T

°C

Internal Connection

Marking Symbol: M2Z

Note) * : t = 1 s

Note) 1. Rated input/output frequency: 100 MHz

4

3

1

2

2.8

+ 0.2

− 0.3

1.5

+ 0.25

− 0.05

0.65

± 0.15

0.65

± 0.15

0.5 R

1

2

4

3

0.4

± 0.2

0.1 to 0.3

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

W.F.Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

V

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A

Note) The part number in the parenthesis shows conventional part number.