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D1FJ4 Datasheet(PDF) 2 Page - Shindengen Electric Mfg.Co.Ltd |
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D1FJ4 Datasheet(HTML) 2 Page - Shindengen Electric Mfg.Co.Ltd |
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2 / 4 page ![]() 順方向特性 Forward Voltage 0.1 10 1 0 0.4 0.2 1.2 1.4 1 0.8 0.6 Tl=150℃(MAX) Tl=150℃(TYP) Tl=25℃(MAX) Tl=25℃(TYP) せん頭サージ順電流耐量 Peak Surge Forward Current Capability 順電力損失曲線 Forward Power Dissipation 80 50 40 30 60 70 20 10 01 100 10 2 1 1.5 0.5 00 0.5 1 1.5 2 2.5 3 3.5 1cycle 10ms10ms Sine wave Non-repetitive Tj=25℃ DC SIN DC D=0.8 D=0.8 D=0.8 0.5 0.5 0.5 0.3 0.3 0.3 0.3 0.2 0.2 0.2 0.1 0.1 0.1 0.05 0.05 0.05 SIN 接合容量 Junction Capacitance 逆電力損失曲線 Reverse Power Dissipation 逆方向特性 Reverse Current 1000 10 100 0. 1 40 10 1 0 0. 2 0. 1 0. 3 0. 4 0. 5 0 10 20 50 40 30 0 10 20 30 40 5 15 25 35 f=1MHz Tl=25℃ TYP Tj=150℃ D=tp/T T tp 0 IO DC SIN DC D=0.05 D=0.05 D=0.05 0.1 0.1 0.1 0.2 0.2 0.2 0.3 0.3 0.3 0.5 0.5 0.5 SIN 0.8 0.8 0.8 Tl=100℃(TYP) Tl=125℃(TYP) Tl=150℃(TYP) Tl=75℃(TYP) Tl=50℃(TYP) Tl=25℃(TYP) ディレーティングカーブ Ta-Io Derating Curve Ta-Io D1FJ4 0 0.5 1 1.5 2 0 20 40 60 80 100 140 160 120 0 20 40 60 80 100 140 160 120 DC DC D=0.8 D=0.8 0.5 0.5 SIN SIN 0.3 0.3 0.2 0.2 0.1 0.1 0.05 0.05 DC D=0.8 0.5 SIN 0.3 0.2 0.1 0.05 Pulse measurement Tj=150℃ D=tp/T T tp 0 VR D=tp/T VR=20V T tp 0 0 IO VR ディレーティングカーブ Tl-Io Derating Curve Tl-Io 0 1 0.5 2 1.5 3 2.5 4 3.5 DC DC D=0.8 D=0.8 0.5 0.5 SIN SIN 0.3 0.3 0.2 0.2 0.1 0.1 0.05 0.05 DC D=0.8 0.5 SIN 0.3 0.2 0.1 0.05 ディレーティングカーブ Ta-Io Derating Curve Ta-Io 0 0.8 0.4 1.2 1.6 2 2.4 2.8 0 20 40 60 80 100 140 160 120 DC DC SIN SIN D=0.8 D=0.8 0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.3 0.3 DC D=0.8 0.5 SIN 0.3 0.2 0.1 0.05 Pulse measurement D=tp/T VR=20V T tp 0 0 IO VR D=tp/T VR=20V T tp 0 0 IO VR 100 0.00001 0.0001 0.001 0.01 1 10 0.1 Forward Voltage VF〔V〕 Average Rectified Forward Current IO〔A〕 Number of Cycles 〔cycle〕 Reverse Voltage VR〔V〕 Reverse Voltage VR〔V〕 Reverse Voltage VR〔V〕 Ambient Temperature Ta〔℃〕 Ambient Temperature Ta〔℃〕 Lead Temperature Tl〔℃〕 On glass-epoxy substrate Soldering land2mm Conductor layer 35μ On alumina substrate Soldering land2mm Conductor layer 20μ Substrate thickness 0.64t |
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