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2SC5480 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part # 2SC5480
Description  Silicon NPN Triple Diffused Horizntal Deflection Output
PDF  6 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC5480 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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2SC5480
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
V
CES
1500
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
14
A
Collector peak current
i
c(peak)
28
A
Collector power dissipation
P
C
Note1
50
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Collector to emitter diode forward current
I
D
14
A
Note:
1. Value at Tc = 25
°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Emitter to base breakdown
voltage
V
(BR)EBO
5
——V
I
E = 500mA, IC = 0
Collector cutoff current
I
CES
—
—
500
µAV
CE = 1500V, RBE = 0
DC current transfer ratio
h
FE1
5
—
25
V
CE = 5 V, IC = 1A
DC current transfer ratio
h
FE2
4—
7
V
CE = 5 V, IC = 10A
Collector to emitter saturation
voltage
V
CE(sat)
——
5
V
I
C =
10A, I
B = 2.5A
Base to emitter saturation
voltage
V
BE(sat)
—
—
1.5
V
I
C =
10A, I
B = 2.5A
Collector to emitter diode
forward voltage
V
ECF
——
2
V
I
F = 14A
Fall time
t
f
—
0.2
0.4
µsI
CP = 7A, IB1= 2.4A
f
H = 31.5kHz



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