2N7002DW datasheet(2/5 Pages) DIODES

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2N7002DW

Document number: DS30120 Rev. 17 - 2

2 of 5

www.diodes.com

December 2017

2N7002DW

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Drain-Gate Voltage RGS  1.0M

VDGR

Gate-Source Voltage

Continuous

VGSS

±20

Pulsed

VGSS

±40

Continuous Drain Current (Note 8) VGS = 5V

Steady

State

TA = +25C

TA = +70C

TA = +100C

0.23

0.18

0.14

Maximum Continuous Body Diode Forward Current (Note 8)

0.53

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

0.8

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 7)

TA = +25°C

0.31

TA = +70°C

0.2

TA = +100°C

0.12

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

RJA

410

°C/W

Total Power Dissipation (Note 8)

TA = +25°C

0.4

TA = +70°C

0.25

TA = +100°C

0.15

Thermal Resistance, Junction to Ambient (Note 8)

Steady State

RJA

318

°C/W

Thermal Resistance, Junction to Case (Note 8)

Steady State

RJC

135

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS



VGS = 0V, ID = 10µA

Zero Gate Voltage Drain Current

@ TC = +25°C

@ TC = +125°C

IDSS



1.0

500

µA

VDS = 60V, VGS = 0V

Gate-Body Leakage

IGSS



±10

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(TH)

1.0



2.0

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

@ TJ = +25°C

@ TJ = +125°C

RDS(ON)



3.2

4.4

7.5

13.5



VGS = 5.0V, ID = 0.05A

VGS = 10V, ID = 0.5A

On-State Drain Current

ID(ON)

0.5

1.0



VGS = 10V, VDS = 7.5V

Forward Transconductance

gFS



VDS =10V, ID = 0.2A

Diode Forward Voltage

VSD



0.78

1.5

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Ciss



VDS = 25V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



Reverse Transfer Capacitance

Crss



2.0

5.0

SWITCHING CHARACTERISTICS (Note 10)

Turn-On Delay Time

tD(ON)



7.0

VDD = 30V, ID = 0.2A,

RL = 150, VGEN = 10V,

RGEN = 25

Turn-Off Delay Time

tD(OFF)



11.0

Notes:

7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

8. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

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